Infrared emission control, also known as infrared emitting diodes, diode class belongs. It can be directly converted into electrical energy near infrared
Light (black light), and can radiate out of the light emitting device is mainly used in various photoelectric switches and remote control transmitter circuit. Infrared emission control structure, principles and common light-emitting diodes are similar, but different semiconductor materials used. Typically use gallium arsenide infrared emitting diode (GaAs), gallium aluminum arsenic (GaAlAs) and other materials, the use of transparent or light blue, black resin package.
Firing distance, launch angle (15 degrees, 30 degrees, 45 degrees, 60 degrees, 90 degrees, 120 degrees, 180 degrees), the light intensity emitted wavelength. The above physical parameters, need to understand its electrical performance parameters: the diameter of the common market, 3mm, 5mm for low-power infrared emission control, 8mm, 10mm for medium power and high-power launch tube. Forward voltage low-power transmitting tubes: 1.1-1.5V, current 20ma, the power of the forward voltage: 1.4-1.65V 50-100ma, high-power launch tubes for the forward voltage:. 1.5-1.9V200-350ma Yu Electronic make 1-10W power infrared emission control can be applied to infrared surveillance lighting